Detail publikace

Low Frequency Noise of Thin Ta2O5 Amorphous Films

PAVELKA, J., ŠIKULA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.

Originální název

Low Frequency Noise of Thin Ta2O5 Amorphous Films

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

A low frequency noise and charge carriers transport mechanism analysis have been performed on Ta - Ta2O5 - MnO2 heterostructures of various thickness to determine the current noise sources. The model of MIS structure can be used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temeprature MnO2 - Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated.

Klíčová slova v angličtině

low frequency noise, tantalum pentoxide, self-healing, reliability

Autoři

PAVELKA, J., ŠIKULA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.

Rok RIV

2001

Vydáno

1. 1. 2001

Nakladatel

World Scientific

Místo

Gainesville, Florida, USA

ISBN

981-02-4677-3

Kniha

Proceedings of the 16th International Conference Noise in Physical Systems and 1/f Fluctuations ICNF 2001

Strany od

91

Strany do

94

Strany počet

4

BibTex

@inproceedings{BUT6854,
  author="Jan {Pavelka} and Josef {Šikula} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="Low Frequency Noise of Thin Ta2O5 Amorphous Films",
  booktitle="Proceedings of the 16th International Conference Noise in Physical Systems and 1/f Fluctuations ICNF 2001",
  year="2001",
  pages="4",
  publisher="World Scientific",
  address="Gainesville, Florida, USA",
  isbn="981-02-4677-3"
}