Detail publikace

Local photoluminescence measurements of semiconductor surface defects

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., UHDEOVÁ, N.

Originální název

Local photoluminescence measurements of semiconductor surface defects

Anglický název

Local photoluminescence measurements of semiconductor surface defects

Jazyk

en

Originální abstrakt

The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.

Anglický abstrakt

The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.

Dokumenty

BibTex


@misc{BUT60177,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Naděžda {Uhdeová}",
  title="Local photoluminescence measurements of semiconductor surface defects",
  annote="The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.",
  booktitle="Correlation optics 6",
  chapter="60177",
  edition="Neuveden",
  year="2003",
  month="september",
  pages="56",
  type="abstract"
}