Detail publikace

NOISE AND NON-LINEARITY OF THICK-FILM RESISTORS

Originální název

NOISE AND NON-LINEARITY OF THICK-FILM RESISTORS

Anglický název

NOISE AND NON-LINEARITY OF THICK-FILM RESISTORS

Jazyk

en

Originální abstrakt

The noise spectroscopy measurement and third harmonic testing of thick-film resistors is proposed as a diagnostic tool for the prediction of possible types of failure. The sources of fluctuations are both in the resistor volume and in contact region. There are two sources of noise and non-linearity in the resistor volume: the junctions between the metallic grains and glass layers and defects of the thick conducting layer structure. 1/f noise in low frequency range is given by two components: fundamental 1/f noise, and excess 1/fa noise created by defects. Carrier transport in thick conducting layers is not strictly linear and third harmonic voltage is proportional to the third power of electric field intensity or current density. It was proved experimentally, that the noise spectral density is inversely proportional to the square of sample length, or electric field intensity. Screening of thick-film resistors by noise and non-linearity indicators selects samples, which are anomalous.

Anglický abstrakt

The noise spectroscopy measurement and third harmonic testing of thick-film resistors is proposed as a diagnostic tool for the prediction of possible types of failure. The sources of fluctuations are both in the resistor volume and in contact region. There are two sources of noise and non-linearity in the resistor volume: the junctions between the metallic grains and glass layers and defects of the thick conducting layer structure. 1/f noise in low frequency range is given by two components: fundamental 1/f noise, and excess 1/fa noise created by defects. Carrier transport in thick conducting layers is not strictly linear and third harmonic voltage is proportional to the third power of electric field intensity or current density. It was proved experimentally, that the noise spectral density is inversely proportional to the square of sample length, or electric field intensity. Screening of thick-film resistors by noise and non-linearity indicators selects samples, which are anomalous.

BibTex


@inproceedings{BUT5733,
  author="Vlasta {Sedláková} and Jan {Pavelka} and Lubomír {Grmela} and Josef {Šikula} and Dubravka {Ročak} and Marko {Hrovat} and Darko {Belavič}",
  title="NOISE AND NON-LINEARITY OF THICK-FILM RESISTORS",
  annote="The noise spectroscopy measurement and third harmonic testing of thick-film resistors is proposed as a diagnostic tool for the prediction of possible types of failure. The sources of fluctuations are both in the resistor volume and in contact region. There are two sources of noise and non-linearity in the resistor volume: the junctions between the metallic grains and glass layers and defects of the thick conducting layer structure. 1/f noise in low frequency range is given by two components: fundamental 1/f noise, and excess 1/fa noise created by defects. Carrier transport in thick conducting layers is not strictly linear and third harmonic voltage is proportional to the third power of electric field intensity or current density. It was proved experimentally, that the noise spectral density is inversely proportional to the square of sample length, or electric field intensity. Screening of thick-film resistors by noise and non-linearity indicators selects samples, which are anomalous.",
  address="IMAPS - Poland Chapter",
  booktitle="Proceedings of European Microelectronics packaging & interconection Symposium",
  chapter="5733",
  institution="IMAPS - Poland Chapter",
  year="2002",
  month="january",
  pages="320",
  publisher="IMAPS - Poland Chapter",
  type="conference paper"
}