Detail publikace

Microscale localization of low light emitting spots in reversed-biased silicon solar cells

ŠKARVADA, P. TOMÁNEK, P. GRMELA, L. SMITH, S.

Originální název

Microscale localization of low light emitting spots in reversed-biased silicon solar cells

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

We present the results of an investigation of the sub-micron irregularities in a monocrystalline silicon solar cell structure utilizing scanning near-field microscopy. The experiments rely on the fact that silicon solar cells under reverse bias exhibit micron-scale low-light emitting centers. A novel method allowing simultaneous localization and measurement of this light on the microscale is presented. The method allows the characterization of these irregularities with high spatial resolution.

Klíčová slova

solar cell, defect, light emission, scanning probe microscope, microscale, localization

Autoři

ŠKARVADA, P.; TOMÁNEK, P.; GRMELA, L.; SMITH, S.

Rok RIV

2010

Vydáno

9. 9. 2010

Nakladatel

Elsevier

Místo

North-Holland

ISSN

0927-0248

Periodikum

SOLAR ENERGY MATERIALS AND SOLAR CELLS

Ročník

94

Číslo

12

Stát

Nizozemsko

Strany od

2358

Strany do

2361

Strany počet

4

BibTex

@article{BUT49808,
  author="Pavel {Škarvada} and Pavel {Tománek} and Lubomír {Grmela} and Steve J. {Smith}",
  title="Microscale localization of low light emitting spots in reversed-biased silicon solar cells",
  journal="SOLAR ENERGY MATERIALS AND SOLAR CELLS",
  year="2010",
  volume="94",
  number="12",
  pages="2358--2361",
  issn="0927-0248"
}