Detail publikace

Detection and localization of defects in monocrystalline silicon solar cell

TOMÁNEK, P. ŠKARVADA, P. MACKŮ, R. GRMELA, L.

Originální název

Detection and localization of defects in monocrystalline silicon solar cell

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Klíčová slova

Defect, optoelectronic device, solar cells, near-field

Autoři

TOMÁNEK, P.; ŠKARVADA, P.; MACKŮ, R.; GRMELA, L.

Rok RIV

2010

Vydáno

1. 6. 2010

Nakladatel

Hindawi Publishing Corporation

Místo

New York, USA

ISSN

1687-6393

Periodikum

Advances in Optical Technologies

Ročník

2010

Číslo

805325

Stát

Spojené státy americké

Strany od

8053251

Strany do

8053255

Strany počet

5

BibTex

@article{BUT46975,
  author="Pavel {Tománek} and Pavel {Škarvada} and Robert {Macků} and Lubomír {Grmela}",
  title="Detection and localization of defects in monocrystalline silicon solar cell",
  journal="Advances in Optical Technologies",
  year="2010",
  volume="2010",
  number="805325",
  pages="8053251--8053255",
  issn="1687-6393"
}