Detail publikace

Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

GRMELA, L. KALA, J. TOMÁNEK, P.

Originální název

Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.

Klíčová slova

optical phenomena, SNOM, InAs/GaAs, quantum dot, artificial molecule

Autoři

GRMELA, L.; KALA, J.; TOMÁNEK, P.

Rok RIV

2006

Vydáno

31. 1. 2006

Nakladatel

SPIE

Místo

Bellingham, USA

ISSN

0277-786X

Periodikum

Proceedings of SPIE

Ročník

6180

Číslo

6180

Stát

Spojené státy americké

Strany od

517

Strany do

522

Strany počet

6

BibTex

@article{BUT45824,
  author="Lubomír {Grmela} and Jaroslav {Kala} and Pavel {Tománek}",
  title="Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules",
  journal="Proceedings of SPIE",
  year="2006",
  volume="6180",
  number="6180",
  pages="517--522",
  issn="0277-786X"
}