Detail publikace

Performance Testing of a MOSFET Sensor

Originální název

Performance Testing of a MOSFET Sensor

Anglický název

Performance Testing of a MOSFET Sensor

Jazyk

en

Originální abstrakt

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.

Anglický abstrakt

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.

Dokumenty

BibTex


@inproceedings{BUT35005,
  author="Jaroslav {Boušek}",
  title="Performance Testing of a MOSFET Sensor",
  annote="MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere.  The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.",
  booktitle="Proccedings of 18th World Hydrogen Energy Conference 2010, Essen, Germany",
  chapter="35005",
  howpublished="print",
  year="2010",
  month="may",
  pages="301--307",
  type="conference paper"
}