Detail publikace

Noise spectroscopy of high resistance CdTe detectors

ANDREEV, A. ŠIK, O. GRMELA, L.

Originální název

Noise spectroscopy of high resistance CdTe detectors

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Previously the analysis of noise characteristics of CdTe single crystals was carried out. For measurements were used CdTe long bars with four contacts, two current and two voltage contacts. The analysis showed that the source of the excess value of 1/f noise spectral density is depleted region of samples at metal-semiconductor junction [1,2]. These samples were high doped and therefore were lowohmic. For increasing production efficiency of both detectors and substrates, the growth of largediameter, inclusion and precipitate-free single crystals with low concentration of native and foreign defects is necessary [3]. This paper presents the noise characteristics of high resistance CdTe radiation detectors. Noise spectroscopy of two CdTe detectors shows that the resulting noise characteristic is given by superposition of 1/f noise and generationrecombination noise.

Klíčová slova

1/f noise

Autoři

ANDREEV, A.; ŠIK, O.; GRMELA, L.

Rok RIV

2010

Vydáno

12. 5. 2010

Nakladatel

Piotr Firek

Místo

Warsaw

ISBN

978-83-7207-874-2

Kniha

33rd International Spring Seminar on Electronics Technology

Strany od

63

Strany do

64

Strany počet

2

BibTex

@inproceedings{BUT34302,
  author="Alexey {Andreev} and Ondřej {Šik} and Lubomír {Grmela}",
  title="Noise spectroscopy of high resistance CdTe detectors",
  booktitle="33rd International Spring Seminar on Electronics Technology",
  year="2010",
  pages="63--64",
  publisher="Piotr Firek",
  address="Warsaw",
  isbn="978-83-7207-874-2"
}