Detail publikace

Fabrication of Anodized Porous Alumina on Thin Film Annealed at Different Temperatures

Originální název

Fabrication of Anodized Porous Alumina on Thin Film Annealed at Different Temperatures

Anglický název

Fabrication of Anodized Porous Alumina on Thin Film Annealed at Different Temperatures

Jazyk

en

Originální abstrakt

This work is focused on the effect of thin evaporated aluminum film anneling at different temperatures. In our case, the P-type silicon wafers were used as substrate for evaporation of pure aluminum. Then, each wafer was annealed in nitrogen atmosphere at temperature range of 300-400 Celsius degree. All samples were analyzed by SEM and AFM.

Anglický abstrakt

This work is focused on the effect of thin evaporated aluminum film anneling at different temperatures. In our case, the P-type silicon wafers were used as substrate for evaporation of pure aluminum. Then, each wafer was annealed in nitrogen atmosphere at temperature range of 300-400 Celsius degree. All samples were analyzed by SEM and AFM.

BibTex


@inproceedings{BUT30083,
  author="Radim {Hrdý} and Marina {Macháčková} and Jana {Drbohlavová} and Jaromír {Hubálek}",
  title="Fabrication of Anodized Porous Alumina on Thin Film Annealed at Different Temperatures",
  annote="This work is focused on the effect of thin evaporated aluminum film anneling at different temperatures. In our case, the P-type silicon wafers were used as substrate for evaporation of pure aluminum. Then, each wafer was annealed in nitrogen atmosphere at temperature range of 300-400 Celsius degree. All samples were analyzed by SEM and AFM.",
  address="Ing. Zdeněk Novotný, CSc.",
  booktitle="EDS 09 IMAPS CS International Conference Proceedings",
  chapter="30083",
  howpublished="print",
  institution="Ing. Zdeněk Novotný, CSc.",
  year="2009",
  month="september",
  pages="214--218",
  publisher="Ing. Zdeněk Novotný, CSc.",
  type="conference paper"
}