Detail publikace

Near-field photoelectric measurement of Si solar cells

ŠKARVADA, P. TOMÁNEK, P. MACKŮ, R.

Originální název

Near-field photoelectric measurement of Si solar cells

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and its size, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work.

Klíčová slova

Scanning Near-field Optical Microscope, Silicon Solar Cell, Photoelectric Properties

Autoři

ŠKARVADA, P.; TOMÁNEK, P.; MACKŮ, R.

Rok RIV

2009

Vydáno

21. 9. 2009

Místo

Hamburg, Germany

ISBN

3-936338-25-6

Kniha

24th European Photovoltaic Solar Energy Conference Proceedings

Strany od

480

Strany do

483

Strany počet

4

BibTex

@inproceedings{BUT29732,
  author="Pavel {Škarvada} and Pavel {Tománek} and Robert {Macků}",
  title="Near-field photoelectric measurement of Si solar cells",
  booktitle="24th European Photovoltaic Solar Energy Conference Proceedings",
  year="2009",
  pages="480--483",
  address="Hamburg, Germany",
  isbn="3-936338-25-6"
}