Detail publikace

Precise Evaluation of Fast Transients in Testing of Silicon Solar Cells

BOUŠEK, J. PORUBA, A.

Originální název

Precise Evaluation of Fast Transients in Testing of Silicon Solar Cells

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Parameters of fotovoltaic cells as the reverse breakdown voltage, depletion layer width and junction capacitance, serial and parallel resistance and lifetime of minority carriers in bulk can be taken easily using the cell response to fast transients. Since the dark forward current forced into the N+P junction is mainly the electron current from the N+ emitter to P base - the relaxation time is given rather by recombination of electrons in the P base. It means that there is only low influence of the surface recombination and recombination in N+ layer and thus the time constant which can be found this way is more consistent with the bulk minority carriers lifetime.

Klíčová slova

crystalline silicon solar cells, minority carrier lifetime, breakdown voltage

Autoři

BOUŠEK, J.; PORUBA, A.

Rok RIV

2007

Vydáno

7. 9. 2007

Nakladatel

WIP-Renewable Energies, 2007

Místo

Milano, Italy

ISBN

3-936338-22-1

Kniha

In 22nd European Photovoltaic Solar Energy Conference

Číslo edice

1

Strany od

385

Strany do

388

Strany počet

4

BibTex

@inproceedings{BUT28204,
  author="Jaroslav {Boušek} and Aleš {Poruba}",
  title="Precise Evaluation of Fast Transients in Testing of Silicon Solar Cells",
  booktitle="In 22nd European Photovoltaic Solar Energy Conference",
  year="2007",
  number="1",
  pages="385--388",
  publisher="WIP-Renewable Energies, 2007",
  address="Milano, Italy",
  isbn="3-936338-22-1"
}