Detail publikace

RTS noise in submicron devices

PAVELKA, J. ŠIKULA, J. CHVÁTAL, M. TACANO, M.

Originální název

RTS noise in submicron devices

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation.

Klíčová slova

RTS noise, 1/f noise, MOSFET, HFET, GaN, InGaAs

Autoři

PAVELKA, J.; ŠIKULA, J.; CHVÁTAL, M.; TACANO, M.

Rok RIV

2007

Vydáno

15. 11. 2007

Nakladatel

VUT

Místo

Brno

ISBN

978-80-7355-078-3

Kniha

New Trends in Physics

Strany od

114

Strany do

117

Strany počet

4

BibTex

@inproceedings{BUT27882,
  author="Jan {Pavelka} and Josef {Šikula} and Miloš {Chvátal} and Munecazu {Tacano}",
  title="RTS noise in submicron devices",
  booktitle="New Trends in Physics",
  year="2007",
  pages="114--117",
  publisher="VUT",
  address="Brno",
  isbn="978-80-7355-078-3"
}