Detail publikace

New application of SCR based ESD protective structure for VHVIC technology

Originální název

New application of SCR based ESD protective structure for VHVIC technology

Anglický název

New application of SCR based ESD protective structure for VHVIC technology

Jazyk

en

Originální abstrakt

ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge events. They are located on input or output (I/O) pads. The use of such structures provides better robustness against ESD but also a number of secondary parasitic effects which limit the circuit performance. These effects, for example, limit the bandwidth of processed signals, causes bigger noise or lower gain. Among often used structures belong structures known as SCR (silicon controlled rectifier) or thyristor. Typical application of SCR ESD protections is in submicron CMOS processes. This text is dealing with SCR structure, which was designed for VHVIC (very high voltage integrated circuits) technology.

Anglický abstrakt

ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge events. They are located on input or output (I/O) pads. The use of such structures provides better robustness against ESD but also a number of secondary parasitic effects which limit the circuit performance. These effects, for example, limit the bandwidth of processed signals, causes bigger noise or lower gain. Among often used structures belong structures known as SCR (silicon controlled rectifier) or thyristor. Typical application of SCR ESD protections is in submicron CMOS processes. This text is dealing with SCR structure, which was designed for VHVIC (very high voltage integrated circuits) technology.

BibTex


@inproceedings{BUT27861,
  author="Petr {Běťák}",
  title="New application of SCR based ESD protective structure for VHVIC technology",
  annote="ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge events. They are located on input or output (I/O) pads. The use of such structures provides better robustness against ESD but also a number of secondary parasitic effects which limit the circuit performance. These effects, for example, limit the bandwidth of processed signals, causes bigger noise or lower gain. Among often used structures belong structures known as SCR (silicon controlled rectifier) or thyristor. Typical application of SCR ESD protections is in submicron CMOS processes. This text is dealing with SCR structure, which was designed for VHVIC (very high voltage integrated circuits) technology.",
  address="Ing. Zdeněk Novotný, Csc",
  booktitle="Moderní metody řešení, návrhu a aplikace elektronických obvodů",
  chapter="27861",
  edition="Zdeněk Kolka",
  institution="Ing. Zdeněk Novotný, Csc",
  year="2007",
  month="september",
  pages="26--30",
  publisher="Ing. Zdeněk Novotný, Csc",
  type="conference paper"
}