Detail publikace

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

ŠIKULA, J. SEDLÁKOVÁ, V. SITA, Z.

Originální název

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.

Klíčová slova v angličtině

Charge Carrier Transport, Noise, Niobium Oxide, Tantalum Capacitors

Autoři

ŠIKULA, J.; SEDLÁKOVÁ, V.; SITA, Z.

Rok RIV

2006

Vydáno

1. 1. 2006

Nakladatel

Ing. Zdeněk Novotný CSc.

Místo

Brno, ČR

ISBN

80-214-3246-2

Kniha

EDS '06 IMAPS CS International Conference Proceedings

Strany od

154

Strany do

163

Strany počet

10

BibTex

@inproceedings{BUT24160,
  author="Josef {Šikula} and Vlasta {Sedláková} and Zdeněk {Sita}",
  title="Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors",
  booktitle="EDS '06 IMAPS CS International Conference Proceedings",
  year="2006",
  pages="10",
  publisher="Ing. Zdeněk Novotný CSc.",
  address="Brno, ČR",
  isbn="80-214-3246-2"
}