Detail publikace

Characterization of Nonlinear On-Chip Capacitors

Originální název

Characterization of Nonlinear On-Chip Capacitors

Anglický název

Characterization of Nonlinear On-Chip Capacitors

Jazyk

en

Originální abstrakt

The paper deals with nonlinear on-chip capacitor characterization. A modification of CBCM (Charge-Based Capacitance Measurements) has been proposed. The CBCM method was originally developed for linear interconnect-capacitance measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. The main advantage of the method is high resolution although it is based on equipment found in any average laboratory. A test-chip implementing the method was designed and manufactured in 0.35m CMOS process. Verification against known capacitances proved the method correctness and accuracy. The test-chip was successfully used for MOSFET gate-capacitance characterization.

Anglický abstrakt

The paper deals with nonlinear on-chip capacitor characterization. A modification of CBCM (Charge-Based Capacitance Measurements) has been proposed. The CBCM method was originally developed for linear interconnect-capacitance measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. The main advantage of the method is high resolution although it is based on equipment found in any average laboratory. A test-chip implementing the method was designed and manufactured in 0.35m CMOS process. Verification against known capacitances proved the method correctness and accuracy. The test-chip was successfully used for MOSFET gate-capacitance characterization.

BibTex


@inproceedings{BUT23787,
  author="Tomáš {Sutorý} and Zdeněk {Kolka}",
  title="Characterization of Nonlinear On-Chip Capacitors",
  annote="The paper deals with nonlinear on-chip capacitor characterization. A modification of CBCM (Charge-Based Capacitance Measurements) has been proposed. The CBCM method was originally developed for linear interconnect-capacitance measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. The main advantage of the method is high resolution although it is based on equipment found in any average laboratory. A test-chip implementing the method was designed and manufactured in 0.35m CMOS process. Verification against known capacitances proved the method correctness and accuracy. The test-chip was successfully used for MOSFET gate-capacitance characterization.",
  address="Brno University of Technology",
  booktitle="Proceedings of the 17th International Conference Radioelektronka 2007",
  chapter="23787",
  institution="Brno University of Technology",
  year="2007",
  month="april",
  pages="51",
  publisher="Brno University of Technology",
  type="conference paper"
}