Detail publikace

Analysis of the CdTe Hole Concentration and the Hole Mobility

Originální název

Analysis of the CdTe Hole Concentration and the Hole Mobility

Anglický název

Analysis of the CdTe Hole Concentration and the Hole Mobility

Jazyk

en

Originální abstrakt

The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the CdTe with changes of temperature is explained in this paper.

Anglický abstrakt

The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the CdTe with changes of temperature is explained in this paper.

BibTex


@inproceedings{BUT23288,
  author="Alexey {Andreev} and Lubomír {Grmela} and Josef {Šikula} and Jiří {Zajaček}",
  title="Analysis of the CdTe Hole Concentration and the Hole Mobility",
  annote="The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the CdTe with changes of temperature is explained in this paper.",
  address="Dan Pitica",
  booktitle="30th International Spring Seminar on Electronics Technology 2007",
  chapter="23288",
  edition="MEDIAMIRA",
  institution="Dan Pitica",
  year="2007",
  month="may",
  pages="86--87",
  publisher="Dan Pitica",
  type="conference paper"
}