Detail publikace

Analysis of Fermi Level Position the CdTe Single Crystal

Originální název

Analysis of Fermi Level Position the CdTe Single Crystal

Anglický název

Analysis of Fermi Level Position the CdTe Single Crystal

Jazyk

en

Originální abstrakt

The CdTe single crystal radiation detector resistance was measured during long time inter-val with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the tempera-ture became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing

Anglický abstrakt

The CdTe single crystal radiation detector resistance was measured during long time inter-val with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the tempera-ture became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing

BibTex


@inproceedings{BUT22567,
  author="Alexey {Andreev}",
  title="Analysis of Fermi Level Position the CdTe Single Crystal",
  annote="The CdTe single crystal radiation detector resistance was measured during long time inter-val with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. 
The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the tempera-ture became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing",
  address="Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno",
  booktitle="Proceedings of the 13th Conference Student EEICT 2007, Volume 3",
  chapter="22567",
  institution="Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno",
  year="2007",
  month="january",
  pages="215",
  publisher="Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno",
  type="conference paper"
}