Detail publikace

Bipolar transistor structure electrical characterization

RECMAN M.

Originální název

Bipolar transistor structure electrical characterization

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The bipolar transistor model parameters extraction method based on device simulator generated electrical characteristics is presented. The forward active region electrical characteristics generated by device simulator DESSIS substitute for the measured ones. The methodology links the device simulator DESSIS and electrical simulator HSPICE and enables to extract parameter numerical values of HSPICE built-in bipolar transistor model. The individual steps to create bipolar transistor structure, generate corresponding mesh, simulate device structure, convert electrical data from DESSIS to HSPICE, extract model parameter values and evaluate the results are described.

Klíčová slova

device simulation, circuit simulation, model parameters extraction

Autoři

RECMAN M.

Rok RIV

2005

Vydáno

1. 1. 2005

Nakladatel

Nakl. Novotný

Místo

Brno

ISBN

80-214-3042-7

Kniha

Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings

Strany od

63

Strany do

67

Strany počet

5

BibTex

@inproceedings{BUT20416,
  author="Milan {Recman}",
  title="Bipolar transistor structure electrical characterization",
  booktitle="Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings",
  year="2005",
  pages="5",
  publisher="Nakl. Novotný",
  address="Brno",
  isbn="80-214-3042-7"
}