Detail publikace

NMOS electrical characterization

RECMAN M.

Originální název

NMOS electrical characterization

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The HSPICE model parameters extraction of submicrometer NMOS structure is presented. The selected electrical curves are generated by parametrized device simulator DESSIS and substitute for the measured ones in an optimization HSPICE procedure. Electrical simulator HSPICE extracts parameter numerical values of built-in model, simulates electrical curves on the basis of extracted parameters and displays the results. The individual steps to create, mesh and simulate device structure, transform DESSIS output data, extract model parameter values and evaluate results are described.

Klíčová slova

device simulation, circuit simulation, model parameters extraction

Autoři

RECMAN M.

Rok RIV

2005

Vydáno

1. 1. 2005

Nakladatel

Nakl. Novotný

Místo

Brno

ISBN

80-214-3042-7

Kniha

Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings

Strany od

72

Strany do

76

Strany počet

5

BibTex

@inproceedings{BUT20415,
  author="Milan {Recman}",
  title="NMOS electrical characterization",
  booktitle="Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings",
  year="2005",
  pages="5",
  publisher="Nakl. Novotný",
  address="Brno",
  isbn="80-214-3042-7"
}