Detail publikace

Impacts of High and Low Field Effects in MOSFETs Scaling

Originální název

Impacts of High and Low Field Effects in MOSFETs Scaling

Anglický název

Impacts of High and Low Field Effects in MOSFETs Scaling

Jazyk

en

Originální abstrakt

Over the past decades, the MOSFET has continually been scaled down in size; typical MOSFET channel lengths were once several micrometers, but modern integrated circuits are incorporating MOSFETs with channel lengths of about a tenth of nanometers. Difficulties arising due to MOSFET scaling are e.g. subthreshold leakage, interconnect capacitance, heat production but also excess noise. The smaller FET is also noisier, which results in weaker signal and the worse signal to noise (S/N) ratio. In submicron technology the thin gate oxide thickness decreasing and the high channel doping results in high transversal electric field. In this paper low and high field effects will be discussed. Preliminary results shows, that drain current fluctuation amplitude is dependent on gate voltage. Also the capture and emission time constants dependences on drain current for low and high drain voltage show that capture time constant increases with increasing drain voltage. Probability for charge carrier capture decreases with increasing lateral electric field.

Anglický abstrakt

Over the past decades, the MOSFET has continually been scaled down in size; typical MOSFET channel lengths were once several micrometers, but modern integrated circuits are incorporating MOSFETs with channel lengths of about a tenth of nanometers. Difficulties arising due to MOSFET scaling are e.g. subthreshold leakage, interconnect capacitance, heat production but also excess noise. The smaller FET is also noisier, which results in weaker signal and the worse signal to noise (S/N) ratio. In submicron technology the thin gate oxide thickness decreasing and the high channel doping results in high transversal electric field. In this paper low and high field effects will be discussed. Preliminary results shows, that drain current fluctuation amplitude is dependent on gate voltage. Also the capture and emission time constants dependences on drain current for low and high drain voltage show that capture time constant increases with increasing drain voltage. Probability for charge carrier capture decreases with increasing lateral electric field.

BibTex


@inproceedings{BUT19077,
  author="Jan {Havránek} and Josef {Šikula} and Jan {Pavelka}",
  title="Impacts of High and Low Field Effects in MOSFETs Scaling",
  annote="Over the past decades, the MOSFET has continually been scaled down in size; typical MOSFET channel lengths were once several micrometers, but modern integrated circuits are incorporating MOSFETs with channel lengths of about a tenth of nanometers. Difficulties arising due to MOSFET scaling are e.g. subthreshold leakage, interconnect capacitance, heat production but also excess noise. The smaller FET is also noisier, which results in weaker signal and the worse signal to noise (S/N) ratio. In submicron technology the thin gate oxide thickness decreasing and the high channel doping results in high transversal electric field. In this paper low and high field effects will be discussed. Preliminary results shows, that drain current fluctuation amplitude is dependent on gate voltage. Also the capture and emission time constants dependences on drain current for low and high drain voltage show that capture time constant increases with increasing drain voltage. Probability for charge carrier capture decreases with increasing lateral electric field.",
  address="IMAPS",
  booktitle="EMPS 2006 4th European Microelectronics and Packaging Symposium with Table-Top Exhibition and Satellite Workshop on Ferroelectric Thin- & Thick-films Processing and Their Applications in MEMS",
  chapter="19077",
  institution="IMAPS",
  year="2006",
  month="january",
  pages="357",
  publisher="IMAPS",
  type="conference paper"
}