Detail publikace

Estimating the Power BJT Excess Charge Recombination Time Constant

MIKLÁŠ, J.

Originální název

Estimating the Power BJT Excess Charge Recombination Time Constant

Typ

článek ve sborníku mimo WoS a Scopus

Jazyk

angličtina

Originální abstrakt

The paper demonstrates an experimental way of estimating the excess minority carrierscharge stored within the the power bipolar transistor in the saturation mode, i.e. with both junctionsforward-biased, as a reference to future IGBT switching action analysis. The method is based onanalyzing the transient turn-off base current waveforms at different conditions right before this event.The base current is known to supply the minority carriers within the device. Estimating the recom-bination time constant serves as a basal precondition for further identification of the excess chargestorage depending on various operating conditions and retrospectively an accurate identification ofpower BJT and IGBT various partial stage of switching action.

Klíčová slova

power BJT, IGBT, saturation, excess charge storage, switching process measurement

Autoři

MIKLÁŠ, J.

Vydáno

23. 4. 2020

Nakladatel

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií

Místo

Brno

ISBN

978-80-214-5867-3

Kniha

Proceedings I of the 26th Conference STUDENT EEICT 2020

Číslo edice

1

Strany od

423

Strany do

429

Strany počet

7

URL

https://www.fekt.vut.cz/conf/EEICT/archiv/sborniky/EEICT_2020_sbornik_1.pdf

BibTex

@inproceedings{BUT165588,
  author="Ján {Mikláš}",
  title="Estimating the Power BJT Excess Charge Recombination Time Constant",
  booktitle="Proceedings I of the 26th Conference STUDENT EEICT 2020",
  year="2020",
  number="1",
  pages="423--429",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií",
  address="Brno",
  isbn="978-80-214-5867-3",
  url="https://www.fekt.vut.cz/conf/EEICT/archiv/sborniky/EEICT_2020_sbornik_1.pdf"
}