Detail publikace

Universal power sequencer for RF power amplifiers

WALDECKER, M.

Originální název

Universal power sequencer for RF power amplifiers

Typ

článek ve sborníku mimo WoS a Scopus

Jazyk

angličtina

Originální abstrakt

More often used Gallium Nitride (GaN) based Radio-Frequency high power transistors in the various RF configuration w.g. Doherty is by their nature easily destroyed, great care must be taken, when powering-up and shutting down this circuits. That means, proper power biasing and sequencing is necessary. The Doherty type RF PA with RF drivers four differnet gate, drain voltages and time when when the individual voltages ate turned on and off must be controled. Universal power sequencer and biasing device, which meets this requirements is described.

Klíčová slova

GaN, RF PA, Biasing, Power sequencing

Autoři

WALDECKER, M.

Vydáno

6. 5. 2020

Nakladatel

Vysoké učení technické v Brně, Fakulta elektrotechniky a informačních technologií

ISBN

978-80-214-5868-0

Kniha

Proceedings II of the 26th Conference STUDENT EEICT 2020

Strany od

126

Strany do

130

Strany počet

5

BibTex

@inproceedings{BUT163789,
  author="Miroslav {Waldecker}",
  title="Universal power sequencer for RF power amplifiers",
  booktitle="Proceedings II of the 26th Conference STUDENT EEICT 2020",
  year="2020",
  pages="126--130",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a informačních technologií",
  isbn="978-80-214-5868-0"
}