Detail publikace

High-Performance Organic Electrochemical transistors

VALA, M. MARKOVÁ, A. STŘÍTESKÝ, S. SALYK, O. VÍTEČEK, J. ŠAFAŘÍKOVÁ, E. KUBALA, L. WEITER, M.

Originální název

High-Performance Organic Electrochemical transistors

Anglický název

High-Performance Organic Electrochemical transistors

Jazyk

en

Originální abstrakt

In this contribution we discuss the ways to maximize the transconductance including utilization of nanomaterials allowing to reach high volumetric capacity. It is proposed herein that proper device design accounting for parasitic resistance is among the main factors contributing to maximization of the transconductance and therefore the sensitivity of the OECT for given material.

Anglický abstrakt

In this contribution we discuss the ways to maximize the transconductance including utilization of nanomaterials allowing to reach high volumetric capacity. It is proposed herein that proper device design accounting for parasitic resistance is among the main factors contributing to maximization of the transconductance and therefore the sensitivity of the OECT for given material.

Dokumenty

BibTex


@misc{BUT159643,
  author="Martin {Vala} and Aneta {Marková} and Stanislav {Stříteský} and Ota {Salyk} and Jan {Víteček} and Eva {Šafaříková} and Lukáš {Kubala} and Martin {Weiter}",
  title="High-Performance Organic Electrochemical transistors",
  annote="In this contribution we discuss the ways to maximize the transconductance including utilization of nanomaterials allowing to reach high volumetric capacity. It is proposed herein that proper device design accounting for parasitic resistance is among the main factors contributing to maximization of the transconductance and therefore the sensitivity of the OECT for given material.",
  chapter="159643",
  howpublished="print",
  year="2019",
  month="october",
  type="abstract"
}