Detail publikace

Local Instabilities In GaAsP Diode PN Junctions

KOKTAVÝ, P., KOKTAVÝ, B.

Originální název

Local Instabilities In GaAsP Diode PN Junctions

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bistable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.

Klíčová slova

Noise, PN junction, avalanche breakdown, microplasma

Autoři

KOKTAVÝ, P., KOKTAVÝ, B.

Rok RIV

2005

Vydáno

1. 1. 2005

Nakladatel

American Institute of Physics

Místo

Salamanca, Spain

ISBN

0-7354-0267-1

Kniha

Noise and Fluctuations, 18th conference on Noise and Fluctuations - ICNF 05

Strany od

393

Strany do

396

Strany počet

4

BibTex

@inproceedings{BUT15272,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="Local Instabilities In GaAsP Diode PN Junctions",
  booktitle="Noise and Fluctuations, 18th conference on Noise and Fluctuations - ICNF 05",
  year="2005",
  pages="4",
  publisher="American Institute of Physics",
  address="Salamanca, Spain",
  isbn="0-7354-0267-1"
}