Detail publikace

Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual kaufman ion-beam source setup

GABLECH, I. SVATOŠ, V. CAHA, O. DUBROKA, A. PEKÁREK, J. KLEMPA, J. NEUŽIL, P. SCHNEIDER, M. ŠIKOLA, T.

Originální název

Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual kaufman ion-beam source setup

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 °C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d33 = (7.33 ± 0.08) pC·N−1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.

Klíčová slova

Ion-beam sputtering deposition; Kaufman ion-beam source; Aluminum nitride thin film; (001) preferential orientation; X-ray diffraction; Optical properties; Ellipsometry; d33 piezoelectric coefficient

Autoři

GABLECH, I.; SVATOŠ, V.; CAHA, O.; DUBROKA, A.; PEKÁREK, J.; KLEMPA, J.; NEUŽIL, P.; SCHNEIDER, M.; ŠIKOLA, T.

Vydáno

31. 1. 2019

Nakladatel

ELSEVIER SCIENCE SA

Místo

LAUSANNE, SWITZERLAND

ISSN

0040-6090

Periodikum

Thin Solid Films

Ročník

670

Číslo

NA

Stát

Nizozemsko

Strany od

105

Strany do

112

Strany počet

8

URL

https://www.sciencedirect.com/science/article/pii/S0040609018308447?via%3Dihub

BibTex

@article{BUT151843,
  author="GABLECH, I. and SVATOŠ, V. and CAHA, O. and DUBROKA, A. and PEKÁREK, J. and KLEMPA, J. and NEUŽIL, P. and SCHNEIDER, M. and ŠIKOLA, T.",
  title="Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual kaufman ion-beam source setup",
  journal="Thin Solid Films",
  year="2019",
  volume="670",
  number="NA",
  pages="105--112",
  doi="10.1016/j.tsf.2018.12.035",
  issn="0040-6090",
  url="https://www.sciencedirect.com/science/article/pii/S0040609018308447?via%3Dihub"
}