Detail publikace

Strange attractors generated by multiple-valued static memory cell with polynomial approximation of resonant tunneling diodes

PETRŽELA, J.

Originální název

Strange attractors generated by multiple-valued static memory cell with polynomial approximation of resonant tunneling diodes

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

This paper brings analysis of the multiple-valued memory system (MVMS) composed by a pair of the resonant tunneling diodes (RTD). Ampere-voltage characteristic (AVC) of both diodes is approximated in operational voltage range as common in practice: by polynomial scalar function. Mathematical model of MVMS represents autonomous deterministic dynamical system with three degrees of freedom and smooth vector field. Based on the very recent results achieved for piecewise-linear MVMS numerical values of the parameters are calculated such that funnel and double spiral chaotic attractor is observed. Existence of such types of strange attractors is proved both numerically by using concept of the largest Lyapunov exponents (LLE) and experimentally by computer-aided simulation of designed lumped circuit using only commercially available active elements.

Klíčová slova

chaos; Lyapunov exponents; multiple-valued; static memory; strange attractors

Autoři

PETRŽELA, J.

Vydáno

12. 9. 2018

Nakladatel

MDPI

Místo

Basel, Switzerland

ISSN

1099-4300

Periodikum

ENTROPY

Ročník

20

Číslo

9

Stát

Švýcarská konfederace

Strany od

1

Strany do

23

Strany počet

23

URL

http://www.mdpi.com/1099-4300/20/9/697

Plný text v Digitální knihovně

http://hdl.handle.net/11012/85298

BibTex

@article{BUT149821,
  author="Jiří {Petržela}",
  title="Strange attractors generated by multiple-valued static memory cell with polynomial approximation of
resonant tunneling diodes",
  journal="ENTROPY",
  year="2018",
  volume="20",
  number="9",
  pages="1--23",
  doi="10.3390/e20090697",
  issn="1099-4300",
  url="http://www.mdpi.com/1099-4300/20/9/697"
}