Detail publikace

Advanced methods for localization and isolation of surface defects in monocrystalline silicon solar cells

GAJDOŠ, A. ŠKVARENINA, Ľ. PAPEŽ, N. ŠKARVADA, P. MACKŮ, R.

Originální název

Advanced methods for localization and isolation of surface defects in monocrystalline silicon solar cells

Typ

abstrakt

Jazyk

angličtina

Originální abstrakt

Variety types of microstructural surface defects could have impact on performance of the whole solar cell. This paper deals with several diagnostic methods for defect detection, localization and isolation. A combination of I-V measurement in dark conditions, visible and near infrared electroluminescence were used for macroscale localization. Microscale localization were done by scanning probe microscope (SPM) with a photomultiplier tube detector (shadow mapping) and scanning electron microscope (SEM). Defect isolation were performed by focused ion beam (FIB) milling. Solar cell performance efficiency between before and after milling process is investigated by non-destructive I-V measurement under defined light conditions. Monocrystalline silicon solar cell samples have area 10x10 mm2 and area of defects is in order of micrometers, so investigation includes following steps. First of all, I-V measurement under reverse biased samples provides information about presence of defect. Rough localization of the defect related spot is also performed under reverse biased sample by sensitive CCD camera in dark conditions, advantage that defective area emit visible light is taken. Precision localization is done by SPM with photomultiplier and takes same principle as electroluminescence method. The SPM micrograph shows 120x120 µm2 area of surface around of the defective area for the SEM localization by morphology compare. The defect isolation is performed by focused ion beam using gallium ions inside chamber of the SEM. Ions of gallium mill a barrier in the solar cell conductive layer to prevent current flow through the defect. Solar cell properties after FIB process show significant improve in reversed current and shunt resistance.

Klíčová slova

silicon; sem; snom; fib; defect; milling; afm; spm; solar cell;

Autoři

GAJDOŠ, A.; ŠKVARENINA, Ľ.; PAPEŽ, N.; ŠKARVADA, P.; MACKŮ, R.

Vydáno

20. 11. 2017

Nakladatel

Comenius University

Místo

Bratislava

ISBN

978-80-223-4411-1

Kniha

Progress in Applied Surface, Interface and Thin Film Science - Solar Renewable Energy News 2017

Číslo edice

první

Strany od

42

Strany do

42

Strany počet

1

BibTex

@misc{BUT144023,
  author="Adam {Gajdoš} and Ľubomír {Škvarenina} and Nikola {Papež} and Pavel {Škarvada} and Robert {Macků}",
  title="Advanced methods for 
localization and isolation of surface defects 
in monocrystalline silicon solar cells",
  booktitle="Progress in Applied Surface, Interface and Thin Film Science - Solar Renewable Energy News 2017",
  year="2017",
  edition="první",
  pages="42--42",
  publisher="Comenius University",
  address="Bratislava",
  isbn="978-80-223-4411-1",
  note="abstract"
}