Detail publikace

Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE

BIOLEK, D. BIOLKOVÁ, V. KOLKA, Z.

Originální název

Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Modifications of the mathematical model of the TiO2 memristor, based on the approximations of Simmons' equations of tunnel effects in Metal-Insulator-Metal structures, are proposed. These modifications improve the performance of the model in the SPICE environment, taking into account the numerical limits of SPICE-family programs.

Klíčová slova

memristor; tunnel effect; Pickett's model; SPICE

Autoři

BIOLEK, D.; BIOLKOVÁ, V.; KOLKA, Z.

Vydáno

12. 6. 2017

Nakladatel

IEEE

Místo

USA

ISBN

978-1-5090-5052-9

Kniha

Proc. of 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017

Edice

1

Číslo edice

14

Strany od

1

Strany do

4

Strany počet

4

URL

http://dx.doi.org/10.1109/SMACD.2017.7981564

BibTex

@inproceedings{BUT140991,
  author="Dalibor {Biolek} and Viera {Biolková} and Zdeněk {Kolka}",
  title="Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE",
  booktitle="Proc. of 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017",
  year="2017",
  series="1",
  number="14",
  pages="1--4",
  publisher="IEEE",
  address="USA",
  doi="10.1109/SMACD.2017.7981564",
  isbn="978-1-5090-5052-9",
  url="http://dx.doi.org/10.1109/SMACD.2017.7981564"
}