Detail publikace

Multifractal characterization of epitaxial silicon carbide on silicon

TALU, S. STACH, S. RAMAZANOV, S. SOBOLA, D. RAMAZANOV, G.

Originální název

Multifractal characterization of epitaxial silicon carbide on silicon

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. Thetopography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Klíčová slova

surface roughness; multifractal analysis; atomic force microscopy; silicon carbide; film growth

Autoři

TALU, S.; STACH, S.; RAMAZANOV, S.; SOBOLA, D.; RAMAZANOV, G.

Vydáno

11. 9. 2017

Nakladatel

DE GRUYTER OPEN

Místo

POLAND

ISSN

2083-134X

Periodikum

MATERIALS SCIENCE-POLAND

Číslo

3

Stát

Polská republika

Strany od

1

Strany do

9

Strany počet

9

BibTex

@article{BUT138821,
  author="Stefan {Talu} and Sebastian {Stach} and Shihgasan {Ramazanov} and Dinara {Sobola} and Gusejn {Ramazanov}",
  title="Multifractal characterization of epitaxial silicon carbide on silicon",
  journal="MATERIALS SCIENCE-POLAND",
  year="2017",
  number="3",
  pages="1--9",
  doi="10.1515/msp-2017-0049",
  issn="2083-134X"
}