Detail publikace

Tantalum Capacitor as a MIS Structure: Transport Characteristic Temperature Dependencies

KUPAROWITZ, M. KUPAROWITZ, T.

Originální název

Tantalum Capacitor as a MIS Structure: Transport Characteristic Temperature Dependencies

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Temperature dependencies of a leakage current in normal mode are explained on the basis of a model, in which the solid state tantalum capacitor is considered as a metal-insulator-semiconductor (MIS) heterostructure. The measurement was performed in temperature range from 105 to 155°C. Ohmic conductivity increases exponentially with increasing temperature with activation energy 0.94 eV. Tunneling voltage parameter and tunneling energy barrier decreases with increasing temperature, reaching values 0.45 to 0.26 eV.

Klíčová slova

antalum capacitor, MIS structure, I-V characteristics, tunneling energy barrier, activation energy

Autoři

KUPAROWITZ, M.; KUPAROWITZ, T.

Vydáno

27. 4. 2017

Nakladatel

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií

Místo

Brno

ISBN

9788021454965

Kniha

EEICT proceedings of the 23rd conference

Strany od

645

Strany do

649

Strany počet

5

URL

http://www.utee.feec.vutbr.cz/eeict/2017/EEICT%202017-sborn%C3%ADk-komplet.pdf

BibTex

@inproceedings{BUT135410,
  author="Martin {Velísek} and Tomáš {Kuparowitz}",
  title="Tantalum Capacitor as a MIS Structure: Transport Characteristic Temperature Dependencies",
  booktitle="EEICT proceedings of the 23rd conference",
  year="2017",
  pages="645--649",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních 
technologií",
  address="Brno",
  isbn="9788021454965",
  url="http://www.utee.feec.vutbr.cz/eeict/2017/EEICT%202017-sborn%C3%ADk-komplet.pdf"
}