Detail publikace

Screen Printed Metallization on p+ Emitters of n-Type Silicon Solar Cells

MOJROVÁ, B. MIHAILETCHI, V. CHU, H. COMPAROTTO, C. THEOBALD, J. KOPECEK, R.

Originální název

Screen Printed Metallization on p+ Emitters of n-Type Silicon Solar Cells

Anglický název

Screen Printed Metallization on p+ Emitters of n-Type Silicon Solar Cells

Jazyk

en

Originální abstrakt

In this study we designed and fabricated n-PERT (Passivated Emitter, Rear Totally Diffused) solar cells and we investigated the effect of different boron emitter profiles (emitter surface concentration and emitter junction depth) on the cell performance. The emitter was varying in the depth demitter and the peak surface carrier concentration NA, and so the resulting sheet resistance RSh was changing between 60 Ω/sq and 140 Ω/sq. The value of RSh of Back Surface Field (BSF) layer was 75 Ω/sq in all cases. We metalized boron emitters by a commercial firing- through AgAl paste or a pure Ag paste and we varied the metallization fraction to extract the recombination current density J0-met under the metal contact for each emitter/paste.

Anglický abstrakt

In this study we designed and fabricated n-PERT (Passivated Emitter, Rear Totally Diffused) solar cells and we investigated the effect of different boron emitter profiles (emitter surface concentration and emitter junction depth) on the cell performance. The emitter was varying in the depth demitter and the peak surface carrier concentration NA, and so the resulting sheet resistance RSh was changing between 60 Ω/sq and 140 Ω/sq. The value of RSh of Back Surface Field (BSF) layer was 75 Ω/sq in all cases. We metalized boron emitters by a commercial firing- through AgAl paste or a pure Ag paste and we varied the metallization fraction to extract the recombination current density J0-met under the metal contact for each emitter/paste.

Dokumenty

BibTex


@inproceedings{BUT130857,
  author="Barbora {Mojrová} and Valentin {Mihailetchi} and Haifeng {Chu} and Corrado {Comparotto} and Jens {Theobald} and Radovan {Kopecek}",
  title="Screen Printed Metallization on p+ Emitters of n-Type Silicon Solar Cells",
  annote="In this study we designed and fabricated n-PERT (Passivated Emitter, Rear Totally Diffused) solar cells and we investigated the effect of different boron emitter profiles (emitter surface concentration and emitter junction depth) on the cell performance. The emitter was varying in the depth demitter and the peak surface carrier concentration NA, and so the resulting sheet resistance RSh was changing between 60 Ω/sq and 140 Ω/sq. The value of RSh of Back Surface Field (BSF) layer was 75 Ω/sq in all cases. We metalized boron emitters by a commercial firing- through AgAl paste or a pure Ag paste and we varied the metallization fraction to extract the recombination current density J0-met under the metal contact for each emitter/paste.",
  booktitle="Imaps Flash Conference",
  chapter="130857",
  howpublished="electronic, physical medium",
  year="2016",
  month="november",
  pages="1--5",
  type="conference paper"
}