Detail publikace

Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

BIOLEK, Z. BIOLEK, D. BIOLKOVÁ, V.

Originální název

Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.

Klíčová slova

memristors; hysteresis; PSM; ideal memristors; memcapacitors; meminductors; differentiable constitutive relation; pinched hysteresis loop; sinusoidal signal; integer power; fingerprint; parameter versus state map

Autoři

BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.

Vydáno

30. 9. 2016

Nakladatel

IET, The Institution of Engineering and Technology

Místo

London, UK

ISSN

0013-5194

Periodikum

Electronics Letters

Ročník

52

Číslo

20

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1669

Strany do

1670

Strany počet

2

URL

https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2016.2138

Plný text v Digitální knihovně

http://hdl.handle.net/11012/203148

BibTex

@article{BUT129543,
  author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková}",
  title="Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors",
  journal="Electronics Letters",
  year="2016",
  volume="52",
  number="20",
  pages="1669--1670",
  doi="10.1049/el.2016.2138",
  issn="0013-5194",
  url="https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2016.2138"
}