Detail publikace

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

HOFMAN, J. HÁZE, J. SHARP, R. JAKSIC, A. VASOVIC, N.

Originální název

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Anglický název

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Jazyk

en

Originální abstrakt

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.

Anglický abstrakt

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.

Dokumenty

BibTex


@inproceedings{BUT127872,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Aleksandar {Jaksic} and Nikola {Vasovic}",
  title="In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs",
  annote="This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.",
  address="IEEE",
  booktitle="Radiation Effects Data Workshop (REDW), 2016 IEEE",
  chapter="127872",
  howpublished="online",
  institution="IEEE",
  year="2016",
  month="july",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}