Detail publikace

Optimization of Boron Diffusion for Screen Printed n-PERT Solar Cells

MOJROVÁ, B. COMPAROTTO, C. KOPECEK, R. MIHAILETCHI, V.

Originální název

Optimization of Boron Diffusion for Screen Printed n-PERT Solar Cells

Anglický název

Optimization of Boron Diffusion for Screen Printed n-PERT Solar Cells

Jazyk

en

Originální abstrakt

In this work we investigate the effect of different boron emitter properties on the cell performance. We fabricated an n-PERT cell concept with front boron emitter and a phosphorous back surface field, with thermal SiO2/SiNx layers on both sides for surface passivation, and a screen printed and fired through metallization of commercial silver paste on both sides. The process was for all wafers the same, with the exception of boron diffusion - boron doping profiles varied in surface concentration, depth and resulting sheet resistance.

Anglický abstrakt

In this work we investigate the effect of different boron emitter properties on the cell performance. We fabricated an n-PERT cell concept with front boron emitter and a phosphorous back surface field, with thermal SiO2/SiNx layers on both sides for surface passivation, and a screen printed and fired through metallization of commercial silver paste on both sides. The process was for all wafers the same, with the exception of boron diffusion - boron doping profiles varied in surface concentration, depth and resulting sheet resistance.

Dokumenty

BibTex


@article{BUT122893,
  author="Barbora {Mojrová} and Corrado {Comparotto} and Radovan {Kopecek} and Valentin {Mihailetchi}",
  title="Optimization of Boron Diffusion for Screen Printed n-PERT Solar Cells",
  annote="In this work we investigate the effect of different boron emitter properties on the cell performance. We fabricated an n-PERT cell concept with front boron emitter and a phosphorous back surface field, with thermal SiO2/SiNx layers on both sides for surface passivation, and a screen printed and fired through metallization of commercial silver paste on both sides. The process was for all wafers the same, with the exception of boron diffusion - boron doping profiles varied in surface concentration, depth and resulting sheet resistance.",
  chapter="122893",
  doi="10.1016/j.egypro.2016.07.129",
  howpublished="online",
  number="92",
  year="2016",
  month="september",
  pages="474--478",
  type="journal article in Web of Science"
}