Detail publikace

Application of CBCM Method to Nonlinear Capacitor Characterization

SUTORÝ, T., KOLKA, Z.

Originální název

Application of CBCM Method to Nonlinear Capacitor Characterization

Anglický název

Application of CBCM Method to Nonlinear Capacitor Characterization

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

čeština

Originální abstrakt

The paper deals with an application of the CBCM method (Charge-Based Capacitance Measurements) to nonlinear capacitance characterization. Since its invention the CBCM method has been extensively used for on-chip interconnect linear capacitance measurements. However, it can be also used for nonlinear device characterization. Application of CBCM to 0.35-um CMOS gate-capacitance measurements is presented.

Klíčová slova v angličtině

Charge-Based Capacitance Measurements, MOS characterization, Test Structures

Autoři

SUTORÝ, T., KOLKA, Z.

Rok RIV

2004

Vydáno

13. 9. 2004

Nakladatel

Poznan University of Technology, PTETiS

Místo

Poznan

ISBN

83-906074-7-6

Kniha

International Conference on Signals and Electronic Systems

Strany od

119

Strany do

121

Strany počet

3

BibTex

@inproceedings{BUT11455,
  author="Tomáš {Sutorý} and Zdeněk {Kolka}",
  title="Application of CBCM Method to Nonlinear Capacitor Characterization",
  booktitle="International Conference on Signals and Electronic Systems",
  year="2004",
  volume="2004",
  pages="3",
  publisher="Poznan University of Technology, PTETiS",
  address="Poznan",
  isbn="83-906074-7-6"
}