Detail publikace

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

Jiri Hofman

Originální název

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

Anglický název

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

Jazyk

en

Originální abstrakt

This work presents a new test method that allows in-situ measurements of radiation-induced changes in temperature coefficients to be made. The preliminary results of a pilot experiment on commercial PMOS transistors and voltage references will be presented and discussed.

Anglický abstrakt

This work presents a new test method that allows in-situ measurements of radiation-induced changes in temperature coefficients to be made. The preliminary results of a pilot experiment on commercial PMOS transistors and voltage references will be presented and discussed.

Dokumenty

BibTex


@misc{BUT114090,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Andrew {Holmes-Siedle}",
  title="A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices",
  annote="This work presents a new test method that allows in-situ measurements of radiation-induced changes in temperature coefficients to be made. The preliminary results of a pilot experiment on commercial PMOS transistors and voltage references will be presented and discussed.",
  chapter="114090",
  year="2015",
  month="march",
  pages="1--26",
  type="lecture"
}