Detail publikace

Activation energy of traps in GaN HFETs

PAVELKA, J. ŠIKULA, J. TACANO, M. TANUMA, N.

Originální název

Activation energy of traps in GaN HFETs

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Low frequency noise characteristics of GaN/AlGaN HFET structures were measured in wide temperature range and activation energy of traps were determined by several methods.

Klíčová slova

trap, GaN, HFET, activation energy, RTS noise

Autoři

PAVELKA, J.; ŠIKULA, J.; TACANO, M.; TANUMA, N.

Rok RIV

2013

Vydáno

24. 6. 2013

Nakladatel

IEEE

Místo

Montpellier

ISBN

978-1-4799-0668-0

Kniha

Proceedings of 22nd International Conference on Noise and Fluctuations ICNF 2013, IEEE Catalog Number: CFP1392N-POD

Strany od

114

Strany do

117

Strany počet

4

BibTex

@inproceedings{BUT104102,
  author="Jan {Pavelka} and Josef {Šikula} and Munecazu {Tacano} and Nobuhisa {Tanuma}",
  title="Activation energy of traps in GaN HFETs",
  booktitle="Proceedings of 22nd International Conference on Noise and Fluctuations ICNF 2013, IEEE Catalog Number: CFP1392N-POD",
  year="2013",
  pages="114--117",
  publisher="IEEE",
  address="Montpellier",
  isbn="978-1-4799-0668-0"
}