Detail publikace

Photoconductivity of CdTe Semiconductor Radiation Detectors

ŠIK, O. GRMELA, L.

Originální název

Photoconductivity of CdTe Semiconductor Radiation Detectors

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

This paper presents the results of experimental studies of transport and noise characteristics of CdTe deterctors. The current – voltage (I-V) characteristics and noise spectral densities were measured at the room temperature in dark and illumination through the contact area. We found that in this sample are good ohmic contacts and then measured noise corresponds volume noise sources only. The dominant noise source is 1/f type. One sample met the criteria to assumed bz the Hooge model. The Hooge constant for this sample was found: 5.5x10^-2. This value is higher than 2x10^-3 proposed by the Hooge theory due to the contact noise sources. Nevertheless, this value is very close to the theoretical.

Klíčová slova

CdTe, noise, reliability

Autoři

ŠIK, O.; GRMELA, L.

Rok RIV

2013

Vydáno

16. 11. 2013

Nakladatel

International Scientific Academy of Engineering & Technology

Místo

India

ISSN

2320-401X

Periodikum

International Journal of Computer Science and Electronics Engineering

Ročník

1

Číslo

5

Stát

Indická republika

Strany od

31

Strany do

34

Strany počet

4

BibTex

@article{BUT103625,
  author="Ondřej {Šik} and Lubomír {Grmela}",
  title="Photoconductivity of CdTe Semiconductor Radiation Detectors",
  journal="International Journal of Computer Science and Electronics Engineering",
  year="2013",
  volume="1",
  number="5",
  pages="31--34",
  issn="2320-401X"
}