Detail publikace

Plasma Enhanced Chemical Vapour Deposition of SiO2-Like Films: Monitoring and Optimization of the Process

Originální název

Plasma Enhanced Chemical Vapour Deposition of SiO2-Like Films: Monitoring and Optimization of the Process

Anglický název

Plasma Enhanced Chemical Vapour Deposition of SiO2-Like Films: Monitoring and Optimization of the Process

Jazyk

en

Originální abstrakt

This work focuses on high density thin films deposited by PECVD using hexamethyldisiloxane precursor. Optical emission spectroscopy was used for plasma diagnostics. Oxygen transmission rate and infrared spectra of deposited layers were measured. Optimal experimental conditions for low carbon content layers and layers with good barrier properties were determined.

Anglický abstrakt

This work focuses on high density thin films deposited by PECVD using hexamethyldisiloxane precursor. Optical emission spectroscopy was used for plasma diagnostics. Oxygen transmission rate and infrared spectra of deposited layers were measured. Optimal experimental conditions for low carbon content layers and layers with good barrier properties were determined.

BibTex


@misc{BUT101784,
  author="Michal {Procházka} and Lucie {Blahová} and František {Krčma} and Radek {Přikryl}",
  title="Plasma Enhanced Chemical Vapour Deposition of SiO2-Like Films: Monitoring and Optimization of the Process",
  annote="This work focuses on high density thin films deposited by PECVD using hexamethyldisiloxane precursor. Optical emission spectroscopy was used for plasma diagnostics. Oxygen transmission rate and infrared spectra of deposited layers were measured. Optimal experimental conditions for low carbon content layers and layers with good barrier properties were determined.",
  address="FCH VUT",
  booktitle="Studentská konference Chemie je život – Sborník abstraktů",
  chapter="101784",
  howpublished="print",
  institution="FCH VUT",
  year="2012",
  month="december",
  pages="120--120",
  publisher="FCH VUT",
  type="abstract"
}