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Course detail

Junctions and nanostructures

Course unit code: FEKT-DFY1A
Academic year: 2017/2018
Type of course unit: optional specialized
Level of course unit: Doctoral (3rd cycle)
Year of study: 1
Semester: winter
Number of ECTS credits:
Learning outcomes of the course unit:
The student will acquire ideas about modern Physics description and explanation of phenomena, that take place in semiconductor structures, on their interfaces and in nanostructures. He is able to explain the nature of physical limits in the semiconductor devices miniaturization.
Mode of delivery:
90 % face-to-face, 10 % distance learning
Prerequisities - Magister degree in Electrical Engiennering or related Diploma
Not applicable.
Recommended optional programme components:
Not applicable.
Course contents (annotation):
Quantum Mechanics essentials. The interfaces: semiconductor A-semiconductor B, semiconductor-metal, semiconductor-metal interface. Depletion layer, properties. Transport of carriers through the interface. Photovoltaic phenomena. Noise in semiconductors. Limits for structures miniaturization. Principal limits by Quantum and Statistical Physics.
Recommended or required reading:
S.M. SZE: Physics of semiconductor devices, 2nd Ed. Wiley Eastern, New Delhi, 1981, ISBN: 0-852-2646-7
JP. Colinge, C.A. Colinge: Physics of Semiconductor Devices, Kluwer 2002, ISBN 1-40207-018-7
Saleh, B.E.A., Teich, M.C.: Základy fotoniky 1,2,3,4 Matfyzpress, Praha, 1994, 1995, 1996
Ch.P.Poole, Jr., F.J. Owens: Introduction to Nanotechnology, Wiley Interscience, 2003 ISBN:0-471-07935-9
Planned learning activities and teaching methods:
Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations.
Assesment methods and criteria linked to learning outcomes:
0-20 points project
0-80 points final exam
Language of instruction:
Work placements:
Not applicable.
Course curriculum:
The essentials of Solids. The semiconductor interface. Homo- and heterojunctions. Poisson's equation.
The metal-semiconductor interface. Charge and potential distribution, Poisson's equation. Depletion layer, capacitance, frequency dependence. Transport of carriers through the interface.
The insulator-semiconductor interface. Charge and potential distribution, Poisson's equation. Depletion layer, capacitance, frequency dependence. Transport of carriers through the interface.
Semiconductor structures produced by advanced technologies. Quantum effects and hot electrons in semiconductor stuctures. Quantum dots and wires.Superlattices. Resonant tunnelling. Ballistic transport.
Optical phenomena in semiconductors. Radiation transitions. Laser structures.
Photovoltaic phenomena.
Stochastic phenomena. Noise in semiconductors. Intrinsic types of the noise: thermal, shot noise, g-n noise. Physical origin. 1/f noise. RTS noise. Model of RTS noise in sub-micron MOSFET devices.
Limits for device miniaturization. Power per unit operation, energy and switching time. Principal limitations from the point of view of Quantum and Statistical Physics.
Fundamental nanostructures. Near-field interaction (force, optical, electric, magnetic, thermal,and others). Application of nanotechnology: Chemical and material synthesis. Design and fabrication of nanostructures. Computer and theoretical nanotechnology. Tools and devices for Nanotechnology. Medical and biomedical science. Detection and localization of nanostructures. Nanoelectronics. Molecular electronics.
The target of the lecture is to present important phenomena of temporary Semiconductors interfaces and nanostructures with help of appropriate tools - Quantum and Statistical Physics.
Specification of controlled education, way of implementation and compensation for absences:
Not applicable.

Type of course unit:

Seminar: 39 hours, optionally
Teacher / Lecturer: prof. Ing. Pavel Koktavý, CSc. Ph.D.

The study programmes with the given course