Course detail

Junctions and nanostructures

FEKT-DFY1AOptional specializedDoctoral (3rd cycle)Acad. year: 2017/2018Winter semester1. year of study4  credits

Quantum Mechanics essentials. The interfaces: semiconductor A-semiconductor B, semiconductor-metal, semiconductor-metal interface. Depletion layer, properties. Transport of carriers through the interface. Photovoltaic phenomena. Noise in semiconductors. Limits for structures miniaturization. Principal limits by Quantum and Statistical Physics.

Learning outcomes of the course unit

The student will acquire ideas about modern Physics description and explanation of phenomena, that take place in semiconductor structures, on their interfaces and in nanostructures. He is able to explain the nature of physical limits in the semiconductor devices miniaturization.

Mode of delivery

90 % face-to-face, 10 % distance learning

Prerequisites

Prerequisities - Magister degree in Electrical Engiennering or related Diploma

Co-requisites

Not applicable.

Recommended optional programme components

Not applicable.

Recommended or required reading

S.M. SZE: Physics of semiconductor devices, 2nd Ed. Wiley Eastern, New Delhi, 1981, ISBN: 0-852-2646-7
JP. Colinge, C.A. Colinge: Physics of Semiconductor Devices, Kluwer 2002, ISBN 1-40207-018-7
Saleh, B.E.A., Teich, M.C.: Základy fotoniky 1,2,3,4 Matfyzpress, Praha, 1994, 1995, 1996
Ch.P.Poole, Jr., F.J. Owens: Introduction to Nanotechnology, Wiley Interscience, 2003 ISBN:0-471-07935-9

Planned learning activities and teaching methods

Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations.

Assesment methods and criteria linked to learning outcomes

0-20 points project
0-80 points final exam

Language of instruction

English

Work placements

Not applicable.

Course curriculum

The essentials of Solids. The semiconductor interface. Homo- and heterojunctions. Poisson's equation.
The metal-semiconductor interface. Charge and potential distribution, Poisson's equation. Depletion layer, capacitance, frequency dependence. Transport of carriers through the interface.
The insulator-semiconductor interface. Charge and potential distribution, Poisson's equation. Depletion layer, capacitance, frequency dependence. Transport of carriers through the interface.
Semiconductor structures produced by advanced technologies. Quantum effects and hot electrons in semiconductor stuctures. Quantum dots and wires.Superlattices. Resonant tunnelling. Ballistic transport.
Optical phenomena in semiconductors. Radiation transitions. Laser structures.
Photovoltaic phenomena.
Stochastic phenomena. Noise in semiconductors. Intrinsic types of the noise: thermal, shot noise, g-n noise. Physical origin. 1/f noise. RTS noise. Model of RTS noise in sub-micron MOSFET devices.
Limits for device miniaturization. Power per unit operation, energy and switching time. Principal limitations from the point of view of Quantum and Statistical Physics.
Fundamental nanostructures. Near-field interaction (force, optical, electric, magnetic, thermal,and others). Application of nanotechnology: Chemical and material synthesis. Design and fabrication of nanostructures. Computer and theoretical nanotechnology. Tools and devices for Nanotechnology. Medical and biomedical science. Detection and localization of nanostructures. Nanoelectronics. Molecular electronics.

Aims

The target of the lecture is to present important phenomena of temporary Semiconductors interfaces and nanostructures with help of appropriate tools - Quantum and Statistical Physics.

Type of course unit

 

Seminar

39 hours, optionally

Teacher / Lecturer