Course detail

Electronic Devices for SEE

FEKT-BPC-ESOSAcad. year: 2019/2020

Semiconductors physics. PN-junction. Semiconductor Diode. Bipolar junction transistors. Field effect transistors. Voltage amplifier in class A and AB. Transistor switches. Multilayer switching devices, thyristor, triac. Transistor switches IGBT, JFET, HEMT. Digital Circuits. Sensors. Data transfers. Radio communication systems.

Learning outcomes of the course unit

Based on the verification of the student's knowledge and skills in seminars, laboratory work and in the written exam, after completing the course the student is able to:

Define the parasitic properties of resistors and explain the effect of materials used and the design of resistors on the generation or suppression of their parasitic properties.
Define the parasitic properties of capacitors and explain the effect of materials used and the design of capacitors to create or suppress their parasitic properties.
Define the parasitic properties of the inductors and explain the influence of the materials used and the design of the inductors to create or suppress their parasitic properties.
Describe the mechanisms that take place in the PN junction in the equilibrium state and in the forward and backward polarizations.
Define the barrier and diffusion capacitance of the PN junction.
Explain the operation of the PN junction in the rectifier, voltage stabilizer, capacitance diode, photodiode and luminescent diode.
Describe the structure of the bipolar transistor and explain its operation.
Design and analyze a class A amplifier with bipolar transistor and a bipolar transistor switch.
Explain the principle and use of linear and nonlinear bipolar transistor models.
Describe the structures of the unipolar transistors JFET and IGFET and explain their operation.
Design and analyze Class A voltage amplifier and Switch with JFET and IGFET Transistors.
Explain the principle of feedback control.
Describe a Class AB power amplifier.
Describe the design of the operational amplifier and explain its operation.
Describe the structure of the thyristor and explain its operation using its substitution scheme.
Describe the structure of the triac.
Define the principle of phase-angle control of switching elements.
Draw and explain examples of typical circuits with thyristor and triac.
Describe transistor switching structures IGBT, JFET, HEMT.
Explain the principle of the transistor converter.
Define the principles for the design and analysis of digital circuits.
Explain the principle of CMOS circuit operation.
Explain the function of the flip-flops.
Describe ways to manage memory.
Draw and describe the connection of rectifiers for different application areas.
Draw and describe examples of stabilizer connection.
Describe and explain the mechanisms of photoluminescence and electroluminescence.
Explains the principles of LED control in lighting technology.
Describe examples of the use of temperature, pressure, humidity and flow sensors.
Explain the method of data transmission over high-voltage installations.
Describe examples of the use of radio communication systems.

Prerequisites

The subject knowledge on the secondary school level is required.

Co-requisites

Not applicable.

Recommended optional programme components

Not applicable.

Recommended or required reading

Singh J. : Semiconductor Devices ,McGraw-Hill
Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999
Boušek J., Kosina P., Mojrova B.: Elektronické součástky, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky sbírka příkladů, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P.: Elektronické součástky BESO, laboratorní cvičení, FEKT VUT V BRNĚ, elektronické skriptum

Planned learning activities and teaching methods

Teachning methods include mutually interlaced lectures, numerical exercises and practical laboratories. Course is taking advantage of e-learning (Moodle) system.

Assesment methods and criteria linked to learning outcomes

Numerical exercises, TEST 1 - 15 points; minimum 8 points.
Numerical exercises, TEST 2 - 15 points; point limit not set
Laboratory exercises: 20 points; minimum 12 points
Final exam - 50 points; minimum 25 points.

Language of instruction

Czech

Work placements

Not applicable.

Course curriculum

Lectures:
1. Passive components. Resistors, Capacitors, Inductors. Dependence of properties on material and design configuration.
2. Semiconductors. PN-junction. Metal-semiconductor junction. Diode.
3. Historical overview of the development of microelectronics and technology of integrated circuits, Moor's laws, design methods, trends.
4. Bipolar junction transistors (BJT). Structure and principle of operation. Substitute models.
5. Field effect transistors JFET. MOSFET. Structures and principle of operation. Substitute models.
6. Transistor Amplifiers. Amplifier classes. Setting a work point. Characteristics.
7. Semiconductor switching devices. Multilayer switching structures. Thyristor. Triak. Phase control.
8. Transistor switches IGBT, JFET, HEMT. Controll circuits.
9. Digital circuits. CMOS circuits. Flip-flop circuits. Memory management.
10. Rectifiers. Stabilized power supply. LED control.
11. Sensors, measurement of physical quantities (temperature, pressure, humidity, flow rate).
12. Basic types of modulations, modulators, demodulators. Basic concepts of communications. Basic types of data transmission (wireless, line, optical). Data transmission over high-voltage installations.
13. Radio communication systems, broadcasting of radio and television. Mobile communications. Radio data networks.
Numerical exercises:
1. Examples of use of passive components. RC, LC and RLC circuits.
2. Inductor and transformer. Examples of use. The effect of the design on the resulting properties.
3. PN junction in forward and in reverse polarization. Built-in voltage. Diffusion and barrier capacitance of the junction. Breakdown of PN junction. Metal-semiconductor junction.
4. PN junction in electronic devices. LED, photodiode. Bipolar transistor. FET transistors.
5. Bipolar transistor as class A voltage amplifier. Setting and stabilization of the working point. Characteristics of SE, SC, SB configurations. Calculation of voltage gain.
6. JFET and IGFET as class A voltage amplifier. Setting and stabilization of the working point. Calculation of voltage gain.
7. Principle of feedback control. Power amplifier in class AB. Operational amplifier.
8. Transistor switch. Design and analysis of switches with BT, JFET and IGFET. The principle of a transistor converter.
9. Phase-angel power control. Examples of circuit connection of thyristor and triac.
10. Digital Circuits. Principles for Design and Analysis of Digital Circuits. CMOS circuits. Flip-flops, memory management.
11. Power supplies. Rectifiers. Connection Examples of stabilizers. LED control.
12. Sensors. Examples of the use of sensors for measuring temperature, pressure, humidity and flow rate.
13. Data transmission over power lines. Examples of use of radio communication systems.
Laboratory excercises:
1. AV diode characteristic, one way rectifier.
2. Differential resistance of the PN junction in semiconductor diode , diode modulator.
3. Bipolar transistor as a voltage amplifier and switch.
4. J-FET and IGFET transistors as a voltage amplifier and switch.
5. Digital Circuits. Combination circuits, generation of clock signals.
6. DEMONSTRATION: Sensors for measurement of physical quantities (temperature, pressure, humidity, flow rate), use of operational amplifiers.

Aims

The acquirement of the knowledge about alectric components and electronic devices .

Specification of controlled education, way of implementation and compensation for absences

Laboratory practicum. Numerical practicum.

Classification of course in study plans

  • Programme BPC-SEE Bachelor's, 1. year of study, summer semester, 5 credits, compulsory

Type of course unit

 

Lecture

14 hours, optionally

Teacher / Lecturer

Exercise

26 hours, compulsory

Teacher / Lecturer

Laboratory exercise

12 hours, compulsory

Teacher / Lecturer