Publication detail

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

TOMÁNEK, P. ŠKARVADA, P. DALLAEVA, D. GRMELA, L. MACKŮ, R. SMITH, S.

Original Title

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Czech Title

Studenoemisní elektroda jako lokální sonda mikroskopů - Zkoumání defektů v solárním článku z monokrystalického křemíku

English Title

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Type

journal article

Language

en

Original Abstract

Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects induced by wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for apertureless scanning near-field optical microscope.

Czech abstract

Monokrystalický křemík je stáůe veůmi zajímavým materiálem pro výrobu solárních článků díky své účinnosti a kvalitě. Bohužel při výrobě vzniknou i defekty, které snižují kvalitu panelů. Většinou se jedná o dva typy defektů - meteriálové a výrobní. K posouzení kvlaity se prování makro a mikroskopické měření. V článku prezentujeme mikroskopickou metodu, která kombinuje měření elektrického šumu se skenovací optické mikroskopií, která lokalizuje malé svítící defekty. Dále ukazujeme použití studenoemisní leptané wolframové elektrody jako výhodné lokální osndy pro bezpaerturní rastrovací mikroskopii v blízkém poli.

English abstract

Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects induced by wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for apertureless scanning near-field optical microscope.

Keywords

Silicon solar cell, Defect, Near-field optically induced photocurrent, Scanning near-field optical microscopy, Cold-field emission electrode

RIV year

2013

Released

21.05.2013

Publisher

MultiScience Publishing

Location

Hebei, China

Pages from

119

Pages to

124

Pages count

6

BibTex


@article{BUT98809,
  author="Pavel {Tománek} and Pavel {Škarvada} and Dinara {Sobola} and Lubomír {Grmela} and Robert {Macků} and Steve J. {Smith}",
  title="Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells",
  annote="Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects induced by wafer processing. To avoid a use of damaged cells,  macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for apertureless scanning near-field optical microscope.",
  address="MultiScience Publishing",
  chapter="98809",
  institution="MultiScience Publishing",
  number="2",
  volume="10",
  year="2013",
  month="may",
  pages="119--124",
  publisher="MultiScience Publishing",
  type="journal article"
}