Publication detail

The growth and dielectric properties of porous-anodic-alumina-supported nanostructured Ta2O5/Ta films

SOLOVEI, D. HUBALEK, J. MOZALEV, A.

Original Title

The growth and dielectric properties of porous-anodic-alumina-supported nanostructured Ta2O5/Ta films

Type

abstract

Language

English

Original Abstract

Amorphous tantalum pentoxide, grown on sintered tantalum powders or microstructured conducting substrates, has been of interest as a metal/oxide electrode with significantly increased overall surface area. Aiming at potential application to capacitors, we propose an advanced approach to fabricate Ta2O5/Ta films with highly porous nanostructured morphology and large surface-to-volume ratio via electrochemical anodizing of tantalum layers sputter-deposited over the nanoporous alumina substrates

Keywords

anodizing, capacitor, tantalum oxide, nanostructure

Authors

SOLOVEI, D.; HUBALEK, J.; MOZALEV, A.

Released

19. 8. 2012

Publisher

ISE

Location

Prague, Czech Republic

Pages from

1

Pages to

1

Pages count

1

BibTex

@misc{BUT96827,
  author="Dmitry {Solovei} and Jaromír {Hubálek} and Alexander {Mozalev}",
  title="The growth and dielectric properties of porous-anodic-alumina-supported nanostructured Ta2O5/Ta films",
  booktitle="63rd Annual Meeting of the International Society of Electrochemistry (ISE2012)",
  year="2012",
  pages="1--1",
  publisher="ISE",
  address="Prague, Czech Republic",
  note="abstract"
}