Publication detail

MEASUREMENT OF THE TEMPERATURE DEPENDENCE OF COMPLEX PERMITTIVITY AT DIFFERENT FREQUENCIES FOR NIOBIUM OXIDE FILM AT COMMERCIAL ELECTROLYTIC CAPACITORS

ABUETWIRAT, I. LIEDERMANN, K.

Original Title

MEASUREMENT OF THE TEMPERATURE DEPENDENCE OF COMPLEX PERMITTIVITY AT DIFFERENT FREQUENCIES FOR NIOBIUM OXIDE FILM AT COMMERCIAL ELECTROLYTIC CAPACITORS

English Title

MEASUREMENT OF THE TEMPERATURE DEPENDENCE OF COMPLEX PERMITTIVITY AT DIFFERENT FREQUENCIES FOR NIOBIUM OXIDE FILM AT COMMERCIAL ELECTROLYTIC CAPACITORS

Type

conference paper

Language

en

Original Abstract

The complex permittivity of thin oxide film in commercial niobium oxide capacitor was measured in the temperature range 218 – 373 K by using Janis cryostat system, with HP4284A impedance analyzer at frequencies from 20 Hz to 1 MHz. Dielectric relaxation was observed in the range 218 – 373 K with the activation energy 0.055 eV. The real part of complex permittivity increases with temperature and decreases with frequency, whereas the imaginary part of complex permittivity displays a broad maximum peak whose position shifts with temperature to a higher frequency region. The measured imaginary parts of complex permittivity of thin oxide film were studied by the graphical analysis of the obtained data as proposed by Havriliak and Negami (HN) equation; we found that HN equation can very well fit the observed dielectric loss as a function of frequency except for slight deviations of observed values from the fitting curve at low frequencies. This slight deviation may be due to dc conductivity. The width parameter alpha_HN increases with decreasing temperature whereas other parameters beta_HN, delta-epsilon and tau decrease with decreasing temperature.

English abstract

The complex permittivity of thin oxide film in commercial niobium oxide capacitor was measured in the temperature range 218 – 373 K by using Janis cryostat system, with HP4284A impedance analyzer at frequencies from 20 Hz to 1 MHz. Dielectric relaxation was observed in the range 218 – 373 K with the activation energy 0.055 eV. The real part of complex permittivity increases with temperature and decreases with frequency, whereas the imaginary part of complex permittivity displays a broad maximum peak whose position shifts with temperature to a higher frequency region. The measured imaginary parts of complex permittivity of thin oxide film were studied by the graphical analysis of the obtained data as proposed by Havriliak and Negami (HN) equation; we found that HN equation can very well fit the observed dielectric loss as a function of frequency except for slight deviations of observed values from the fitting curve at low frequencies. This slight deviation may be due to dc conductivity. The width parameter alpha_HN increases with decreasing temperature whereas other parameters beta_HN, delta-epsilon and tau decrease with decreasing temperature.

Keywords

electrolytic capacitor, niobium pentoxide, dielectric spectrum, permittivity, temperature dependence

RIV year

2012

Released

10.10.2012

Publisher

Vysoké učení technické v Brně

Location

Brno

ISBN

978-80-214-4594-9

Book

New Trends in Physics, Nové trendy ve fyzice, NTF 2012

Edition

první

Edition number

1

Pages from

27

Pages to

30

Pages count

4

BibTex


@inproceedings{BUT96577,
  author="Inas Faisel {Abuetwirat} and Karel {Liedermann}",
  title="MEASUREMENT OF THE TEMPERATURE DEPENDENCE OF COMPLEX PERMITTIVITY AT DIFFERENT FREQUENCIES FOR NIOBIUM OXIDE FILM AT COMMERCIAL ELECTROLYTIC CAPACITORS",
  annote="The complex permittivity of thin oxide film in commercial niobium oxide capacitor was measured in the temperature range 218 – 373 K by using Janis cryostat system, with HP4284A impedance analyzer at frequencies from 20 Hz to 1 MHz. Dielectric relaxation was observed in the range 218 – 373 K with the activation energy 0.055 eV. The real part of complex permittivity increases with temperature and decreases with frequency, whereas the imaginary part of complex permittivity displays a broad maximum peak whose position shifts with temperature to a higher frequency region. The measured imaginary parts of complex permittivity of thin oxide film were studied by the graphical analysis of the obtained data as proposed by Havriliak and Negami (HN) equation; we found that HN equation can very well fit the observed dielectric loss as a function of frequency except for slight deviations of observed values from the fitting curve at low frequencies. This slight deviation may be due to dc conductivity. The width parameter alpha_HN increases with decreasing temperature whereas other parameters beta_HN, delta-epsilon and tau decrease with decreasing temperature.",
  address="Vysoké učení technické v Brně",
  booktitle="New Trends in Physics, Nové trendy ve fyzice, NTF 2012",
  chapter="96577",
  edition="první",
  howpublished="print",
  institution="Vysoké učení technické v Brně",
  year="2012",
  month="october",
  pages="27--30",
  publisher="Vysoké učení technické v Brně",
  type="conference paper"
}