Publication detail

Charge Carriers Transport and Noise of Niobium Capacitors

ŠIKULA, J., PAVELKA, J., GRMELA, L., DOBIS, P., ZEDNÍČEK, T.

Original Title

Charge Carriers Transport and Noise of Niobium Capacitors

English Title

Charge Carriers Transport and Noise of Niobium Capacitors

Type

conference paper

Language

en

Original Abstract

A charge carriers transport mechanism and low frequency noise analysis has been performed on niobium capacitors to determine the mechanism of current flow and current noise sources, both in normal and reverse directions. The model of this MIS structure can be used to give a physical interpretation of the niobium capacitor characteristics and temperature dependences. In normal mode the V.A. characteristic can be approximated by Poole-Frenkel emission. In reverse mode two regions can be distinguished with respect to applied voltage. For applied voltage less than 0.5 V the V.A. characteristic can be approximated by exponential dependence of current on applied voltage. The noise spectral density varies approximately with the square of the leakage current, but it was frequently observed that the noise spectral density is related to the “excess” component of the leakage current. This excess current is most likely to be localised in discrete regions, flaws or defects. The temperature dependence of leakage current is also of an exponential form. The noise spectral density is 1/f in normal operation mode. Noise and transport characteristics are similar to that of tantalum capacitors.

English abstract

A charge carriers transport mechanism and low frequency noise analysis has been performed on niobium capacitors to determine the mechanism of current flow and current noise sources, both in normal and reverse directions. The model of this MIS structure can be used to give a physical interpretation of the niobium capacitor characteristics and temperature dependences. In normal mode the V.A. characteristic can be approximated by Poole-Frenkel emission. In reverse mode two regions can be distinguished with respect to applied voltage. For applied voltage less than 0.5 V the V.A. characteristic can be approximated by exponential dependence of current on applied voltage. The noise spectral density varies approximately with the square of the leakage current, but it was frequently observed that the noise spectral density is related to the “excess” component of the leakage current. This excess current is most likely to be localised in discrete regions, flaws or defects. The temperature dependence of leakage current is also of an exponential form. The noise spectral density is 1/f in normal operation mode. Noise and transport characteristics are similar to that of tantalum capacitors.

Keywords

Charge carriers transport, leakage current, noise, niobium capacitors

RIV year

2002

Released

20.10.2002

Publisher

Electronic Components Institute Internationale Ltd.

Location

Swindon, England

Pages from

32

Pages to

36

Pages count

5

BibTex


@inproceedings{BUT9624,
  author="Josef {Šikula} and Jan {Pavelka} and Lubomír {Grmela} and Pavel {Dobis} and Tomáš {Zedníček}",
  title="Charge Carriers Transport and Noise of Niobium Capacitors",
  annote="A charge carriers transport mechanism and low frequency noise analysis has been performed on niobium capacitors to determine the mechanism of current flow and current noise sources, both in normal and reverse directions. The model of this MIS structure can be used to give a physical interpretation of the niobium capacitor characteristics and temperature dependences. 
In normal mode the V.A. characteristic can be approximated by Poole-Frenkel emission. In reverse mode two regions can be distinguished with respect to applied voltage. For applied voltage less than 0.5 V the V.A. characteristic can be approximated by exponential dependence of current on applied voltage. 
The noise spectral density varies approximately with the square of the leakage current, but it was frequently observed that the noise spectral density is related to the “excess” component of the leakage current. This excess current is most likely to be localised in discrete regions, flaws or defects. 
The temperature dependence of leakage current is also of an exponential form. The noise spectral density is 1/f in normal operation mode. Noise and transport characteristics are similar to that of tantalum capacitors.",
  address="Electronic Components Institute Internationale Ltd.",
  booktitle="CARTS-EUROPE 2002 Proceedings, 16th European Passive Components Conference",
  chapter="9624",
  institution="Electronic Components Institute Internationale Ltd.",
  year="2002",
  month="october",
  pages="32",
  publisher="Electronic Components Institute Internationale Ltd.",
  type="conference paper"
}