Publication detail

Simulation of quantum dot in electrostatic fields

GRMELA, L. HRUŠKA, P.

Original Title

Simulation of quantum dot in electrostatic fields

Type

conference paper

Language

English

Original Abstract

Behavior of a nanostructure consisting of Si quantum dot (QD) embedded in SiO2 dielectric medium, which is under bias of varying electrostatic field is simulated. The paper presents the wave functions psi, probability functions psi.psi* and energies of quantum states of a QD. Abrupt displacement of the peak of psi.psi* at a certain field value is elucidated as electron emission. The field distribution and the characteristics of the nanostructure quantum states are simulated numerically with help of Comsol Multiphysics Poisson-Schrödinger 2D model, developed by the authors.

Keywords

quantum dot,field distribution,electrostatic field, wave functions

Authors

GRMELA, L.; HRUŠKA, P.

RIV year

2012

Released

10. 9. 2012

Location

Kharkiv, Ukraine

ISBN

978-1-4673-4479-1

Book

Mathematical Methods in Electromagnetic Theory

Pages from

193

Pages to

196

Pages count

4

BibTex

@inproceedings{BUT96009,
  author="Lubomír {Grmela} and Pavel {Hruška}",
  title="Simulation of quantum dot in electrostatic fields",
  booktitle="Mathematical Methods in Electromagnetic Theory",
  year="2012",
  pages="193--196",
  address="Kharkiv, Ukraine",
  isbn="978-1-4673-4479-1"
}