Publication detail

Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K

KOPECKÝ, M. SEDLÁKOVÁ, V. HOLCMAN, V. PETTERSSON, H.

Original Title

Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K

English Title

Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K

Type

conference paper

Language

en

Original Abstract

This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using. The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I – t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. The analysis of measured characteristics was performed and the charge transport mechanisms were discovered as electron tunnelling and quantum transitions of electrons from trapping centers levels to conduction band. The SEM pictures of Tantalum capacitors structures for various cases were performed.

English abstract

This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using. The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I – t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. The analysis of measured characteristics was performed and the charge transport mechanisms were discovered as electron tunnelling and quantum transitions of electrons from trapping centers levels to conduction band. The SEM pictures of Tantalum capacitors structures for various cases were performed.

Keywords

Charge carrier transport, tantalum pentoxide, thin film, tunneling, Poole-Frenkel current

RIV year

2012

Released

19.09.2012

Publisher

MIDEM

Location

Slovinsko

ISBN

978-961-92933-2-4

Book

MIDEM Society for Microelectronic, Electronic Components and Materials - Conference 2012 Proceedings

Pages from

145

Pages to

150

Pages count

6

BibTex


@inproceedings{BUT95973,
  author="Martin {Kopecký} and Vlasta {Sedláková} and Vladimír {Holcman} and Hakan {Pettersson}",
  title="Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K",
  annote="This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using.  The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I – t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. The analysis of measured characteristics was performed and the charge transport mechanisms were discovered as electron tunnelling and quantum transitions of electrons from trapping centers levels to conduction band. The SEM pictures of Tantalum capacitors structures for various cases were performed.",
  address="MIDEM",
  booktitle="MIDEM Society for Microelectronic, Electronic Components and Materials - Conference 2012 Proceedings",
  chapter="95973",
  howpublished="print",
  institution="MIDEM",
  year="2012",
  month="september",
  pages="145--150",
  publisher="MIDEM",
  type="conference paper"
}