Publication detail

Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes

TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J.

Original Title

Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes

English Title

Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes

Type

conference paper

Language

en

Original Abstract

Low-frequency electrical (laser diode output voltage) and near-field optical (light output power) fluctuation spectra and their cross-correlation factor have been investigated in GaAs/AlGaAs ridge waveguide laser diodes (LDs) with an active region containing a single quantum well (SQW) layer. The noise measurements were performed in the frequency range from 20 Hz to 20 kHz, at dc current ranging from fractions of the threshold current through to multiples of it. It is shown that in the lasing region the intensive Lorentzian-type electrical and optical noises with negative cross-correlation factor are characteristic for all samples regardless of technological treatments mentioned. This noise is due to charge carrier recombination processes in the interfaces between the active layer and the neighbouring layers.

English abstract

Low-frequency electrical (laser diode output voltage) and near-field optical (light output power) fluctuation spectra and their cross-correlation factor have been investigated in GaAs/AlGaAs ridge waveguide laser diodes (LDs) with an active region containing a single quantum well (SQW) layer. The noise measurements were performed in the frequency range from 20 Hz to 20 kHz, at dc current ranging from fractions of the threshold current through to multiples of it. It is shown that in the lasing region the intensive Lorentzian-type electrical and optical noises with negative cross-correlation factor are characteristic for all samples regardless of technological treatments mentioned. This noise is due to charge carrier recombination processes in the interfaces between the active layer and the neighbouring layers.

RIV year

2003

Released

15.11.2003

Publisher

Japan society of applied physics

Location

Nara, Japan

Pages from

431

Pages to

434

Pages count

4

Documents

BibTex


@inproceedings{BUT9385,
  author="Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová}",
  title="Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes",
  annote="Low-frequency electrical (laser diode output voltage) and near-field optical (light output power) fluctuation spectra and their cross-correlation factor have been investigated in GaAs/AlGaAs ridge waveguide laser diodes (LDs) with an active region containing a single quantum well (SQW) layer. The noise measurements were performed in the frequency range from 20 Hz to 20 kHz, at dc current ranging from fractions of the threshold current through to multiples of it. It is shown that in the lasing region the intensive Lorentzian-type electrical and optical noises with negative cross-correlation factor are characteristic for all samples regardless of technological treatments mentioned. This noise is due to charge carrier recombination processes in the interfaces between the active layer and the neighbouring layers.",
  address="Japan society of applied physics",
  booktitle="Atomically controlled surfaces, interfaces and nanostructures",
  chapter="9385",
  institution="Japan society of applied physics",
  year="2003",
  month="november",
  pages="431",
  publisher="Japan society of applied physics",
  type="conference paper"
}