Publication detail

In-situ Monitoring of Thin Film Depositon Process Using Optical Emission Spectroscopy

PROCHÁZKA, M. BLAHOVÁ, L. KRČMA, F. PŘIKRYL, R.

Original Title

In-situ Monitoring of Thin Film Depositon Process Using Optical Emission Spectroscopy

English Title

In-situ Monitoring of Thin Film Depositon Process Using Optical Emission Spectroscopy

Type

conference paper

Language

en

Original Abstract

Plasma enhanced chemical vapour deposition (PECVD) has become more and more popular for thin film deposition, especially using organosilicon precursors. This work focuses on high density films deposited by PECVD using hexamethyldisiloxane precursor. Optical emission spectroscopy was used for plasma diagnostics. Oxygen transmission rate and infrared spectra of deposited layers were measured. Optimal experimental conditions for low carbon content layers and layers with good barrier properties were determined.

English abstract

Plasma enhanced chemical vapour deposition (PECVD) has become more and more popular for thin film deposition, especially using organosilicon precursors. This work focuses on high density films deposited by PECVD using hexamethyldisiloxane precursor. Optical emission spectroscopy was used for plasma diagnostics. Oxygen transmission rate and infrared spectra of deposited layers were measured. Optimal experimental conditions for low carbon content layers and layers with good barrier properties were determined.

Keywords

PECVD, HMDSO, thin layers, barriere properties

RIV year

2012

Released

10.07.2012

Publisher

EPS

Location

Lisbon

ISBN

2-914771-74-6

Book

Europhysics Conference Abstracts

Edition number

36A

Pages from

P3.5.71

Pages to

P3.5.72

Pages count

2

BibTex


@inproceedings{BUT93226,
  author="Michal {Procházka} and Lucie {Blahová} and František {Krčma} and Radek {Přikryl}",
  title="In-situ Monitoring of Thin Film Depositon Process Using Optical Emission Spectroscopy",
  annote="Plasma enhanced chemical vapour deposition (PECVD) has become more and more popular for thin film deposition, especially using organosilicon precursors. This work focuses on high density films deposited by PECVD using hexamethyldisiloxane precursor. Optical emission spectroscopy was used for plasma diagnostics. Oxygen transmission rate and infrared spectra of deposited layers were measured. Optimal experimental conditions for low carbon content layers and layers with good barrier properties were determined.",
  address="EPS",
  booktitle="Europhysics Conference Abstracts",
  chapter="93226",
  howpublished="electronic, physical medium",
  institution="EPS",
  year="2012",
  month="july",
  pages="P3.5.71--P3.5.72",
  publisher="EPS",
  type="conference paper"
}